SQS966ENW-T1_GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

572pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerPAK® 1212-8W

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

27.8W (Tc)

Rds On (Max) @ Id, Vgs :

36 mOhm @ 1.25A, 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8W

Vgs(th) (Max) @ Id :

2.5V @ 250µA