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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 30A
- Current - Reverse Leakage @ Vr :
- 30µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- TO-220-2 Full Pack
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 26ns
- Series :
- FRED Pt®
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- TO-220-2 Full Pack
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 2.65V @ 30A
- Datasheet :
- VS-ETH3006FP-M3
Cross References
-
Stock 3,838
-
Stock 3,536
-
Stock 3,400
-
Stock 3,891
-
Stock 1,037
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING VS-ETH3006FP-M3 THEN BOUGHT
-
Stock 1,137
-
Stock 1,290
-
Stock 736
-
Stock 3,263
-
Stock 2,040
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "VS-E" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
VS-EMG050J60N | Vishay Semiconductor Diodes Division | 3,838 | IGBT 600V 88A 338W EMIPAK2 |
VS-EMF050J60U | Vishay Semiconductor Diodes Division | 3,536 | IGBT 600V 88A 338W EMIPAK2 |
VS-ETY020P120F | Vishay Semiconductor Diodes Division | 3,400 | OUTPUT & SW MODULES - EMIPAK 2B |
VS-ETF150Y65N | Vishay Semiconductor Diodes Division | 3,891 | IGBT 650V 150A EMIPAK-2B |
VS-ENQ030L120S | Vishay Semiconductor Diodes Division | 1,037 | IGBT 1200V 61A 216W EMIPAK-1B |
VS-ETF075Y60U | Vishay Semiconductor Diodes Division | 1,687 | IGBT 600V 109A 294W EMIPAK-2B |
VS-ETF150Y65U | Vishay Semiconductor Diodes Division | 3,252 | IGBT 650V 150A EMIPAK-2B |
VS-ETL015Y120H | Vishay Semiconductor Diodes Division | 2,342 | IGBT 1200V 22A 89W EMIPAK-2B |
VS-EPU3006-N3 | Vishay Semiconductor Diodes Division | 3,064 | DIODE GEN PURP 600V 30A TO247AC |
VS-ETU3006STRRHM3 | Vishay Semiconductor Diodes Division | 3,240 | DIODE GEN PURP 600V 30A TO263AB |
VS-ETU3006STRLHM3 | Vishay Semiconductor Diodes Division | 1,727 | DIODE GEN PURP 600V 30A TO263AB |
VS-ETH3006STRRHM3 | Vishay Semiconductor Diodes Division | 1,400 | DIODE GEN PURP 600V 30A TO263AB |
VS-ETH3006STRLHM3 | Vishay Semiconductor Diodes Division | 2,727 | DIODE GEN PURP 600V 30A TO263AB |
VS-ETU3006SHM3 | Vishay Semiconductor Diodes Division | 2,581 | DIODE GEN PURP 600V 30A TO263AB |
VS-ETU3006-1HM3 | Vishay Semiconductor Diodes Division | 1,261 | DIODE GEN PURP 600V 30A TO262AA |
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