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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 10pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 10µA @ 1000V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- Automotive, AEC-Q101
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 1000V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 1A
- Datasheet :
- US1MHE3_A/H
Cross References
-
Stock 3,591
-
Stock 974
-
Stock 2,948
-
Stock 1,908
-
Stock 767
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING US1MHE3_A/H THEN BOUGHT
-
Stock 1,137
-
Stock 1,290
-
Stock 736
-
Stock 3,263
-
Stock 2,040
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "US1M" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| US1MHE3/61T | Vishay Semiconductor Diodes Division | 3,591 | DIODE GEN PURP 1KV 1A DO214AC |
| US1MHE3/61T | Vishay Semiconductor Diodes Division | 974 | DIODE GEN PURP 1KV 1A DO214AC |
| US1MHE3/61T | Vishay Semiconductor Diodes Division | 2,948 | DIODE GEN PURP 1KV 1A DO214AC |
| US1MHE3/5AT | Vishay Semiconductor Diodes Division | 1,908 | DIODE GEN PURP 1KV 1A DO214AC |
| US1M-13 | Diodes Incorporated | 767 | DIODE GEN PURP 1KV 1A SMA |
| US1M-13 | Diodes Incorporated | 2,114 | DIODE GEN PURP 1KV 1A SMA |
| US1M-13 | Diodes Incorporated | 3,082 | DIODE GEN PURP 1KV 1A SMA |
| US1MHR3G | Taiwan Semiconductor Corporation | 2,512 | DIODE GEN PURP 1A DO214AC |
| US1M/1 | Vishay Semiconductor Diodes Division | 1,929 | DIODE GEN PURP 1KV 1A DO214AC |
| US1M M2G | Taiwan Semiconductor Corporation | 2,253 | DIODE GEN PURP 1A DO214AC |
| US1MHE3_A/I | Vishay Semiconductor Diodes Division | 2,122 | DIODE GEN PURP 1KV 1A DO214AC |
| US1M-M3/61T | Vishay Semiconductor Diodes Division | 3,457 | DIODE GEN PURP 1KV 1A DO214AC |
| US1MHE3_A/H | Vishay Semiconductor Diodes Division | 621 | DIODE GEN PURP 1KV 1A DO214AC |
| US1MHE3_A/H | Vishay Semiconductor Diodes Division | 1,365 | DIODE GEN PURP 1KV 1A DO214AC |
| US1M-E3/61T | Vishay Semiconductor Diodes Division | 1,970 | DIODE GEN PURP 1KV 1A DO214AC |
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