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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 30A
- Current - Reverse Leakage @ Vr :
- 80µA @ 200V
- Diode Type :
- Standard
- Mounting Type :
- Chassis, Stud Mount
- Operating Temperature - Junction :
- -40°C ~ 125°C
- Package / Case :
- DO-203AB, DO-5, Stud
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 350ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-203AB
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Voltage - Forward (Vf) (Max) @ If :
- 1.8V @ 62.8A
- Datasheet :
- IRD3911
Cross References
-
Stock 2,779
-
Stock 1,993
-
Stock 2,165
-
Stock 3,372
-
Stock 2,123
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING IRD3911 THEN BOUGHT
-
Stock 1,137
-
Stock 1,290
-
Stock 736
-
Stock 3,263
-
Stock 2,040
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "IRD3" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| IRD3CH9DF6 | Infineon Technologies | 2,779 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH9DD6 | Infineon Technologies | 1,993 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH9DB6 | Infineon Technologies | 2,165 | DIODE GEN PURP 1.2KV 10A DIE |
| IRD3CH82DF6 | Infineon Technologies | 3,372 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH82DD6 | Infineon Technologies | 2,123 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH82DB6 | Infineon Technologies | 2,752 | DIODE GEN PURP 1.2KV 150A DIE |
| IRD3CH5DB6 | Infineon Technologies | 3,463 | DIODE GEN PURP 1.2KV 5A DIE |
| IRD3CH5BD6 | Infineon Technologies | 1,872 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH53DF6 | Infineon Technologies | 2,590 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH53DD6 | Infineon Technologies | 1,259 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH53DB6 | Infineon Technologies | 3,660 | DIODE GEN PURP 1.2KV 100A DIE |
| IRD3CH42DF6 | Infineon Technologies | 1,321 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH42DD6 | Infineon Technologies | 1,028 | DIODE CHIP EMITTER CONTROLLED |
| IRD3CH42DB6 | Infineon Technologies | 2,934 | DIODE GEN PURP 1.2KV 75A DIE |
| IRD3CH31DF6 | Infineon Technologies | 947 | DIODE CHIP EMITTER CONTROLLED |
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