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- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 11.2GHz
- Gain :
- 12.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.45dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 3-SMD, Flat Leads
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 900mW
- Series :
- -
- Supplier Device Package :
- UFM
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5.3V
- Datasheet :
- MT3S113TU,LF
Cross References
-
Stock 1,240
-
Stock 3,502
-
Stock 3,509
-
Stock 2,038
-
Stock 3,348
PEOPLE WHO BOUGHT Transistors - Bipolar (BJT) - RF ALSO BOUGHT
-
Stock 1,871
-
Stock 2,979
-
Stock 1,560
-
Stock 3,231
-
Stock 1,151
PEOPLE VIEWING MT3S113TU,LF THEN BOUGHT
-
Stock 2,486
-
Stock 2,867
-
Stock 3,771
-
Stock 695
-
Stock 1,658
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Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "MT3S" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 1,240 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 3,502 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 3,509 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 2,038 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 3,348 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 1,387 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 1,122 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 3,258 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 1,281 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 3,176 | TRANS RF NPN 5V 1GHZ USM |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 2,649 | TRANS RF NPN 5V 1GHZ USM |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 849 | TRANS RF NPN 5V 1GHZ USM |
| MT3S113P(TE12L,F) | Toshiba Semiconductor and Storage | 808 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S113P(TE12L,F) | Toshiba Semiconductor and Storage | 1,861 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S113P(TE12L,F) | Toshiba Semiconductor and Storage | 889 | RF SIGE HETEROJUNCTION BIPOLAR N |
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