NSVMUN5212DW1T1G

Manufacturer :

ON Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

250mW

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Series :

-

Supplier Device Package :

SC-88/SC70-6/SOT-363

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V