PMV60EN,215

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.7A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

280mW (Tj)

Rds On (Max) @ Id, Vgs :

55 mOhm @ 2A, 10V

Series :

TrenchMOS™

Supplier Device Package :

TO-236AB (SOT23)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA