JANTX2N3501L

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-5

Packaging :

Bulk

Part Status :

Active

Power - Max :

1W

Series :

Military, MIL-PRF-19500/366

Supplier Device Package :

TO-5

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max) :

150V