APTM100VDA35T3G

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

22A

Drain to Source Voltage (Vdss) :

1000V (1kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP3

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

390W

Rds On (Max) @ Id, Vgs :

420 mOhm @ 11A, 10V

Series :

POWER MOS 7®

Supplier Device Package :

SP3

Vgs(th) (Max) @ Id :

5V @ 2.5mA