1214-300M

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA, 5V

Frequency - Transition :

1.2GHz ~ 1.4GHz

Gain :

7dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55ST

Packaging :

Bulk

Part Status :

Active

Power - Max :

88W

Series :

-

Supplier Device Package :

55ST

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

50V