DMG6602SVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

3.4A, 2.8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

840mW

Rds On (Max) @ Id, Vgs :

60 mOhm @ 3.1A, 10V

Series :

-

Supplier Device Package :

TSOT-23-6

Vgs(th) (Max) @ Id :

2.3V @ 250µA