- Part Status :
- Input Type :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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1,261
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Infineon Technologies | IC DRIVER MOSFET/IGBT 1CH 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | |||
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2,856
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Infineon Technologies | IC MOSFET DRIVER HIGH-SIDE 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns | |||
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783
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Infineon Technologies | IC MOSFET DRIVER HIGH-SIDE 8-DIP | - | Obsolete | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns | ||
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3,972
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Infineon Technologies | IC DRIVER MOSFET/IGBT 1CH 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | |||
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3,934
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Infineon Technologies | IC HIGH SIDE DRIVER SGL 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns | |||
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3,537
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Infineon Technologies | IC MOSFET DRIVER SGL-CH 8-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns |
