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- IGBT Type :
- Vce(on) (Max) @ Vge, Ic :
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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Configuration | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | |
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1,024
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Infineon Technologies | IGBT MODULE VCES 650V 400A | - | Active | -40°C ~ 125°C | Chassis Mount | Module | 4800W | 2 Independent | Module | 660A | 3300V | 5mA | - | 4.25V @ 15V, 400A | 50nF @ 25V | Standard | No | |||
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3,961
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Infineon Technologies | IGBT MODULE VCES 650V 400A | - | Active | -40°C ~ 125°C | Chassis Mount | Module | 4800W | Single Chopper | Module | 660A | 3300V | 5mA | - | 4.25V @ 15V, 400A | 50nF @ 25V | Standard | No | |||
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996
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Infineon Technologies | IGBT MODULE VCES 650V 400A | - | Active | -40°C ~ 125°C | Chassis Mount | Module | 4800W | Single Chopper | Module | 660A | 3300V | 5mA | - | 4.25V @ 15V, 400A | 50nF @ 25V | Standard | No | |||
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2,156
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Vishay Semiconductor Diodes Division | IGBT 1200V 660A 2660W INT-A-PAK | - | Active | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | 2660W | Half Bridge | Double INT-A-PAK | 660A | 1200V | 5mA | NPT | 3.6V @ 15V, 400A | 33.7nF @ 30V | Standard | No | |||
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1,939
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Infineon Technologies | IGBT MODULE 1200V 450A | - | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 2250W | Three Phase Inverter | Module | 660A | 1200V | 3mA | Trench Field Stop | 2.1V @ 15V, 450A | 28nF @ 25V | Standard | Yes |
