- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- IGBT Type :
- Input Capacitance (Cies) @ Vce :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Operating Temperature | Mounting Type | Package / Case | Power - Max | Configuration | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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746
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Microsemi Corporation | POWER MODULE - IGBT | - | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 483W | Half Bridge | SP3F | 200A | 650V | 200µA | - | 2.2V @ 15V, 200A | 12nF @ 25V | Standard | Yes | |||
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2,094
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Microsemi Corporation | PWR MOD IGBT4 650V 200A SP1 | - | Active | -40°C ~ 175°C (TJ) | Through Hole | SP1 | 350W | Half Bridge | SP1 | 200A | 650V | 100µA | Trench Field Stop | 2.3V @ 15V, 100A | 6nF @ 25V | Standard | Yes | |||
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1,230
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Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | - | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | 1136W | Half Bridge | Double INT-A-PAK | 200A | 1200V | 5mA | NPT | 3.6V @ 15V, 100A | 8.45nF @ 20V | Standard | No | |||
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2,081
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Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | - | Active | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | 833W | Half Bridge | Double INT-A-PAK | 200A | 1200V | 5mA | - | 2.35V @ 15V, 100A | 8.58nF @ 25V | Standard | No | |||
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1,155
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Powerex Inc. | IGBT MOD DUAL 1700V 200A KA SER | IGBTMOD™ | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 1100W | Half Bridge | Module | 200A | 1700V | 1mA | - | 4V @ 15V, 200A | 29nF @ 10V | Standard | No | |||
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2,584
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Infineon Technologies | MOD IGBT MED PWR 62MM-1 | Active | -40°C ~ 150°C | Chassis Mount | Module | - | Half Bridge | Module | 200A | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V, 200A | 14nF @ 25V | Standard | No | ||||
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732
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Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | - | Active | 150°C (TJ) | Chassis Mount | INT-A-PAK | 650W | Half Bridge | INT-A-PAK | 200A | 1200V | 5mA | - | 2.2V @ 15V, 100A | 7.43nF @ 25V | Standard | No | |||
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3,824
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Littelfuse Inc. | IGBT 1200V 200A 625W PKG S | - | Active | -40°C ~ 125°C (TJ) | Chassis Mount | S-3 Module | 625W | Half Bridge | S3 | 200A | 1200V | 1mA | Trench Field Stop | 1.7V @ 15V, 150A (Typ) | 10.5nF @ 25V | Standard | No |
