4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI50CN10NGHKSA1
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RFQ
1,307
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Infineon Technologies MOSFET N-CH 100V 20A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 44W (Tc) N-Channel - 100V 20A (Tc) 50 mOhm @ 20A, 10V 4V @ 20µA 16nC @ 10V 1090pF @ 50V 10V ±20V
IPD49CN10N G
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RFQ
1,757
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Infineon Technologies MOSFET N-CH 100V 20A TO252-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 44W (Tc) N-Channel - 100V 20A (Tc) 49 mOhm @ 20A, 10V 4V @ 20µA 16nC @ 10V 1090pF @ 50V 10V ±20V
IPB50CN10NGATMA1
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RFQ
1,829
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Infineon Technologies MOSFET N-CH 100V 20A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 44W (Tc) N-Channel - 100V 20A (Tc) 50 mOhm @ 20A, 10V 4V @ 20µA 16nC @ 10V 1090pF @ 50V 10V ±20V
IPP50CN10NGXKSA1
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RFQ
3,837
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Infineon Technologies MOSFET N-CH 100V 20A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 44W (Tc) N-Channel - 100V 20A (Tc) 50 mOhm @ 20A, 10V 4V @ 20µA 16nC @ 10V 1090pF @ 50V 10V ±20V
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