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- Packaging :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,630
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | ||
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3,126
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Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | |||
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2,145
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V |
