Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.47
RFQ
2,639
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 80V 100A LFPAK56 TrenchMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Ta) N-Channel 80V 100A (Ta) 8 mOhm @ 25A, 10V 2.1V @ 1mA 104nC @ 10V 8167pF @ 25V 5V, 10V ±20V
BUK9Y8R5-80EX
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RFQ
2,900
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 80V 100A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Tc) N-Channel 80V 100A (Tc) 8 mOhm @ 25A, 10V 2.1V @ 1mA 54.7nC @ 5V 8167pF @ 25V 5V ±10V
BUK9Y8R5-80EX
Per Unit
$1.39
RFQ
1,310
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 80V 100A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Tc) N-Channel 80V 100A (Tc) 8 mOhm @ 25A, 10V 2.1V @ 1mA 54.7nC @ 5V 8167pF @ 25V 5V ±10V
BUK9Y8R5-80EX
Per Unit
$0.58
RFQ
3,059
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 80V 100A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Tc) N-Channel 80V 100A (Tc) 8 mOhm @ 25A, 10V 2.1V @ 1mA 54.7nC @ 5V 8167pF @ 25V 5V ±10V
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