Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN8R5-108ESQ
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RFQ
1,880
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 108V 100A I2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 263W (Tc) N-Channel 108V 100A (Tj) 8.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 5512pF @ 50V 10V ±20V
PSMN8R5-100XSQ
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RFQ
3,706
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 100V 49A TO-220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220F 55W (Tc) N-Channel 100V 49A (Tj) 8.5 mOhm @ 10A, 10V 4V @ 1mA 100nC @ 10V 5512pF @ 50V 10V ±20V
PSMN8R5-100PSQ
Per Unit
$1.92
RFQ
1,451
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 100V 100A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 263W (Tc) N-Channel 100V 100A (Tj) 8.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 5512pF @ 50V 10V ±20V
PSMN8R5-100ESQ
Per Unit
$1.70
RFQ
3,953
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 100V 100A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 263W (Tc) N-Channel 100V 100A (Tj) 8.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 5512pF @ 50V 10V ±20V
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