- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,065
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Infineon Technologies | MOSFET N-CH 100V 192A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | |||
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3,984
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||
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833
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | |||
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2,002
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V |
