- Packaging :
- Mounting Type :
- Supplier Device Package :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,536
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Infineon Technologies | MOSFET N-CH 60V 195A | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 375W (Tc) | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | |||
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1,539
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Infineon Technologies | MOSFET N-CH 60V 195A | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | ||
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2,346
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Infineon Technologies | MOSFET N-CH 60V 195A | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V | |||
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3,197
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Infineon Technologies | MOSFET N-CH 60V 195A | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 60V | 195A (Tc) | 1.95 mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | 4.5V, 10V | ±20V |
