5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP120P04P404AKSA1
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RFQ
897
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Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.8 mOhm @ 100A, 10V 4V @ 340µA 205nC @ 10V 14790pF @ 25V 10V ±20V
IPI120P04P404AKSA1
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RFQ
2,789
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.8 mOhm @ 100A, 10V 4V @ 340µA 205nC @ 10V 14790pF @ 25V 10V ±20V
IPB120P04P404ATMA1
Per Unit
$1.09
RFQ
1,034
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Infineon Technologies MOSFET P-CH TO263-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 136W (Tc) P-Channel - 40V 120A (Tc) 3.5 mOhm @ 100A, 10V 4V @ 340µA 205nC @ 10V 14790pF @ 25V 10V ±20V
IXFK250N10P
Per Unit
$15.56
RFQ
2,696
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IXYS MOSFET N-CH 100V 250A TO-264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1250W (Tc) N-Channel - 100V 250A (Tc) 6.5 mOhm @ 50A, 10V 5V @ 1mA 205nC @ 10V 16000pF @ 25V 10V ±20V
IXFX250N10P
Per Unit
$15.41
RFQ
956
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IXYS MOSFET N-CH 100V 250A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 100V 250A (Tc) 6.5 mOhm @ 50A, 10V 5V @ 1mA 205nC @ 10V 16000pF @ 25V 10V ±20V
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