- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Drive Voltage (Max Rds On, Min Rds On) :
12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,619
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NXP USA Inc. | MOSFET N-CH 30V 120A I2PAK | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 349W (Tc) | N-Channel | 30V | 120A (Tc) | 1.6 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | |||
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1,117
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NXP USA Inc. | MOSFET N-CH 30V 120A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | 30V | 120A (Tc) | 1.6 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | |||
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2,126
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NXP USA Inc. | MOSFET N-CH 30V 120A D2PAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 357W (Tc) | N-Channel | 30V | 120A (Tc) | 1.3 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | |||
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2,595
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NXP USA Inc. | MOSFET N-CH 30V 120A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 357W (Tc) | N-Channel | 30V | 120A (Tc) | 1.3 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | |||
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2,173
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NXP USA Inc. | MOSFET N-CH 30V 120A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 357W (Tc) | N-Channel | 30V | 120A (Tc) | 1.3 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | |||
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2,019
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Infineon Technologies | MOSFET P-CH 40V 90A TO252-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 125W (Tc) | P-Channel | 40V | 90A (Tc) | 4.7 mOhm @ 90A, 10V | 4V @ 250µA | 154nC @ 10V | 10300pF @ 25V | 10V | ±20V | |||
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2,431
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Infineon Technologies | MOSFET P-CH 40V 90A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 125W (Tc) | P-Channel | 40V | 90A (Tc) | 4.7 mOhm @ 90A, 10V | 4V @ 250µA | 154nC @ 10V | 10300pF @ 25V | 10V | ±20V | ||||
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2,953
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Infineon Technologies | MOSFET P-CH 40V 90A TO252-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 125W (Tc) | P-Channel | 40V | 90A (Tc) | 4.7 mOhm @ 90A, 10V | 4V @ 250µA | 154nC @ 10V | 10300pF @ 25V | 10V | ±20V | ||||
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3,844
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ON Semiconductor | MOSFET N-CH 60V POWER56 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 | 3.3W (Ta), 187W (Tc) | N-Channel | 60V | 32A (Ta), 245A (Tc) | 1.65 mOhm @ 32A, 10V | 4.5V @ 250µA | 154nC @ 10V | 8235pF @ 30V | 8V, 10V | ±20V | |||
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2,426
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ON Semiconductor | MOSFET N-CH 60V POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 | 3.3W (Ta), 187W (Tc) | N-Channel | 60V | 32A (Ta), 245A (Tc) | 1.65 mOhm @ 32A, 10V | 4.5V @ 250µA | 154nC @ 10V | 8235pF @ 30V | 8V, 10V | ±20V | ||||
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2,180
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ON Semiconductor | MOSFET N-CH 60V POWER56 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 | 3.3W (Ta), 187W (Tc) | N-Channel | 60V | 32A (Ta), 245A (Tc) | 1.65 mOhm @ 32A, 10V | 4.5V @ 250µA | 154nC @ 10V | 8235pF @ 30V | 8V, 10V | ±20V | ||||
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2,987
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Taiwan Semiconductor Corporation | MOSFET N-CH 100V 160A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 300W (Tc) | N-Channel | 100V | 160A (Tc) | 5.5 mOhm @ 30A, 10V | 4V @ 250µA | 154nC @ 10V | 9840pF @ 30V | 10V | ±20V |