4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD80N06S3-09
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RFQ
3,587
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Infineon Technologies MOSFET N-CH 55V 80A TO252-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 107W (Tc) N-Channel - 55V 80A (Tc) 8.4 mOhm @ 40A, 10V 4V @ 55µA 88nC @ 10V 6100pF @ 25V 10V ±20V
IPP77N06S3-09
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RFQ
2,958
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Infineon Technologies MOSFET N-CH 55V 77A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 107W (Tc) N-Channel - 55V 77A (Tc) 9.1 mOhm @ 39A, 10V 4V @ 55µA 103nC @ 10V 5335pF @ 25V 10V ±20V
IPI77N06S3-09
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RFQ
3,144
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Infineon Technologies MOSFET N-CH 55V 77A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 107W (Tc) N-Channel - 55V 77A (Tc) 9.1 mOhm @ 39A, 10V 4V @ 55µA 103nC @ 10V 5335pF @ 25V 10V ±20V
IPB77N06S3-09
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RFQ
1,403
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Infineon Technologies MOSFET N-CH 55V 77A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 107W (Tc) N-Channel - 55V 77A (Tc) 8.8 mOhm @ 39A, 10V 4V @ 55µA 103nC @ 10V 5335pF @ 25V 10V ±20V
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