Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD400N06NGBTMA1
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RFQ
3,595
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Infineon Technologies MOSFET N-CH 60V 27A TO-252 OptiMOS™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 60V 27A (Tc) 40 mOhm @ 27A, 10V 4V @ 28µA 17nC @ 10V 650pF @ 30V 10V ±20V
IPD400N06NGBTMA1
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RFQ
1,956
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Infineon Technologies MOSFET N-CH 60V 27A TO-252 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 60V 27A (Tc) 40 mOhm @ 27A, 10V 4V @ 28µA 17nC @ 10V 650pF @ 30V 10V ±20V
IPD400N06NGBTMA1
Per Unit
$0.28
RFQ
604
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 27A TO-252 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 60V 27A (Tc) 40 mOhm @ 27A, 10V 4V @ 28µA 17nC @ 10V 650pF @ 30V 10V ±20V
IPD50N04S309ATMA1
Per Unit
$0.38
RFQ
3,042
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 40V 50A TO252-3 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 63W (Tc) N-Channel - 40V 50A (Tc) 9 mOhm @ 50A, 10V 4V @ 28µA 26nC @ 10V 1750pF @ 25V 10V ±20V
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