- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,545
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | ||
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2,195
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Infineon Technologies | MOSFET N-CH 40V 84A 8PQFN | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 4.2W (Ta), 63W (Tc) | N-Channel | - | 40V | 84A (Tc) | 4.6 mOhm @ 50A, 10V | 3.9V @ 50µA | 66nC @ 10V | 2170pF @ 25V | 10V | ±20V | |||
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1,449
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.25 mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
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1,931
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
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3,526
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | |||
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3,782
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | |||
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962
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Infineon Technologies | MOSFET N-CH 40V 95A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 83W (Tc) | N-Channel | - | 40V | 95A (Tc) | 4.5 mOhm @ 57A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V |
