1 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Nexperia USA Inc. | MOSFET P-CH 20V 3.2A 6DFN2020MD | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 550mW (Ta) | P-Channel | 20V | 3.2A (Ta) | 122 mOhm @ 3.2A, 4.5V | 1.25V @ 250µA | 5nC @ 4.5V | 388pF @ 10V | 3V, 4.5V | +8V, -10V |
