4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI04CN10N G
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RFQ
3,791
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Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 100V 100A (Tc) 4.2 mOhm @ 100A, 10V 4V @ 250µA 210nC @ 10V 13800pF @ 50V 10V ±20V
IPP04CN10NG
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RFQ
3,245
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Infineon Technologies MOSFET N-CH 100V 100A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 100V 100A (Tc) 4.2 mOhm @ 100A, 10V 4V @ 250µA 210nC @ 10V 13800pF @ 50V 10V ±20V
CSD18532KCS
Per Unit
$2.28
RFQ
2,532
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Texas Instruments MOSFET N-CH 60V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 250W (Tc) N-Channel - 60V 100A (Tc) 4.2 mOhm @ 100A, 10V 2.2V @ 250µA 53nC @ 10V 4680pF @ 30V 4.5V, 10V ±20V
IPB140N08S404ATMA1
Per Unit
$1.20
RFQ
1,601
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Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 161W (Tc) N-Channel - 80V 140A (Tc) 4.2 mOhm @ 100A, 10V 4V @ 100µA 80nC @ 10V 5500pF @ 25V 10V ±20V
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