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- Mounting Type :
- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
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4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,791
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 10V | ±20V | |||
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3,245
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Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 10V | ±20V | |||
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2,532
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Texas Instruments | MOSFET N-CH 60V 100A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 250W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 2.2V @ 250µA | 53nC @ 10V | 4680pF @ 30V | 4.5V, 10V | ±20V | ||||
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1,601
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Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 161W (Tc) | N-Channel | - | 80V | 140A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 100µA | 80nC @ 10V | 5500pF @ 25V | 10V | ±20V |