Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD23NQ10T,118
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RFQ
2,265
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 100V 23A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel - 100V 23A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 1187pF @ 25V 10V ±20V
PHP23NQ11T,127
Per Unit
$0.95
RFQ
1,040
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Nexperia USA Inc. MOSFET N-CH 110V 23A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 110V 23A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 10V ±20V
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