Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
GET PRICE
RFQ
1,643
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN PG-TDSON-8-23 63W (Tc) N-Channel - 40V 60A (Tc) 5.6 mOhm @ 30A, 10V 2.2V @ 30µA 43nC @ 10V 3600pF @ 25V 4.5V, 10V ±16V
SUM70060E-GE3
Per Unit
$2.21
RFQ
1,695
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 100V 131A D2PK TO263 ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 131A (Tc) 5.6 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3330pF @ 50V 7.5V, 10V ±20V
SUM70060E-GE3
Per Unit
$1.09
RFQ
1,327
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 100V 131A TO263 ThunderFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 131A (Tc) 5.6 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3330pF @ 50V 7.5V, 10V ±20V
Page 1 / 1