Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIZ48N
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RFQ
2,347
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Infineon Technologies MOSFET N-CH 55V 36A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 42W (Tc) N-Channel - 55V 36A (Tc) 16 mOhm @ 22A, 10V 4V @ 250µA 89nC @ 10V 1900pF @ 25V 10V ±20V
IRFIZ48NPBF
Per Unit
$1.75
RFQ
1,071
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Infineon Technologies MOSFET N-CH 55V 40A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 54W (Tc) N-Channel - 55V 40A (Tc) 16 mOhm @ 22A, 10V 4V @ 250µA 89nC @ 10V 1900pF @ 25V 10V ±20V
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