Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.84
RFQ
3,027
Ships today + free overnight shipping
Nexperia USA Inc. MOSFET N-CH 100V 98A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 183W (Ta) N-Channel - 100V 98A (Ta) 8.7 mOhm @ 25A, 10V 4V @ 1mA 44.5nC @ 10V 3181pF @ 50V 7V, 10V ±20V
SQR70090ELR_GE3
Per Unit
$1.52
RFQ
3,468
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CHANNEL 100V 86A DPAK Automotive, AEC-Q101, TrenchFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-4, DPak (3 Leads + Tab) D-PAK (TO-252) 136W (Tc) N-Channel - 100V 86A (Tc) 8.7 mOhm @ 25A, 10V 2.5V @ 250µA 65nC @ 10V 3500pF @ 25V 4.5V, 10V ±20V
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