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- Series :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,234
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Vishay Siliconix | MOSFET N-CH 60V 110A D2PAK | TrenchFET® | Last Time Buy | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 375W (Tc) | N-Channel | - | 60V | 110A (Tc) | 3.9 mOhm @ 30A, 10V | 4.5V @ 250µA | 300nC @ 10V | 15800pF @ 25V | 10V | ±20V | ||
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989
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Vishay Siliconix | MOSFET N-CH 60V 110A D2PAK | TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 375W (Tc) | N-Channel | - | 60V | 110A (Tc) | 3.9 mOhm @ 30A, 10V | 4.5V @ 250µA | 300nC @ 10V | 15800pF @ 25V | 10V | ±20V | |||
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3,488
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Vishay Siliconix | MOSFET N-CH 60V 110A D2PAK | TrenchFET® | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 375W (Tc) | N-Channel | - | 60V | 110A (Tc) | 3.9 mOhm @ 30A, 10V | 4.5V @ 250µA | 300nC @ 10V | 15800pF @ 25V | 10V | ±20V | |||
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1,143
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Infineon Technologies | MOSFET N-CH 30V 50A IPAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 94W (Tc) | N-Channel | - | 30V | 50A (Tc) | 3.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 4.5V, 10V | ±20V |
