- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,797
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ON Semiconductor | MOSFET P-CH 120V 15A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 100W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
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3,707
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ON Semiconductor | MOSFET P-CH 120V 15A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 100W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
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2,831
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ON Semiconductor | MOSFET P-CH 120V 15A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 41W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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2,596
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ON Semiconductor | MOSFET P-CH 120V 15A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 100W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V |
