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9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,344
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
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1,159
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Infineon Technologies | MOSFET N-CH 100V 97A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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644
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Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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605
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
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3,075
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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2,457
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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2,928
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Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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3,331
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Infineon Technologies | MOSFET N-CH 100V 97A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
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3,480
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Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V |
