- Manufacture :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,617
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NXP USA Inc. | MOSFET N-CH 25V 75A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 107W (Tc) | N-Channel | - | 25V | 75A (Tc) | 6.6 mOhm @ 25A, 10V | 2.15V @ 1mA | 11.7nC @ 4.5V | 1570pF @ 12V | 4.5V, 10V | ±20V | ||
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2,613
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IXYS | MOSFET N-CH 55V 110A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 55V | 110A (Tc) | 6.6 mOhm @ 25A, 10V | 4V @ 250µA | 57nC @ 10V | 3060pF @ 25V | 10V | ±20V | |||
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1,749
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IXYS | MOSFET N-CH 55V 110A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 180W (Tc) | N-Channel | - | 55V | 110A (Tc) | 6.6 mOhm @ 25A, 10V | 4V @ 250µA | 57nC @ 10V | 3060pF @ 25V | 10V | ±20V |
