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- Package / Case :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,091
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Infineon Technologies | MOSFET N-CH 60V 50A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 79W (Tc) | N-Channel | - | 60V | 50A (Tc) | 8.4 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 4.5V, 10V | ±20V | ||
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3,691
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Infineon Technologies | MOSFET N-CH TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 79W (Tc) | N-Channel | - | 60V | 50A (Tc) | 8.4 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 4.5V, 10V | ±20V | |||
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1,511
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Infineon Technologies | MOSFET N-CH 60V 50A TO-220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 79W (Tc) | N-Channel | - | 60V | 50A (Tc) | 8.4 mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | 4.5V, 10V | ±20V |
