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- Series :
- Part Status :
- Packaging :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,528
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Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
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1,160
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Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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3,071
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Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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3,941
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ON Semiconductor | MOSFET N-CH 150V 4.2A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 150V | 4.2A (Tc) | 800 mOhm @ 2.1A, 10V | 4V @ 250µA | 7nC @ 10V | 230pF @ 25V | 10V | ±25V |
