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- Supplier Device Package :
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- FET Type :
- Rds On (Max) @ Id, Vgs :
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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,031
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Infineon Technologies | MOSFET N-CH 100V 10.5A IPAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | P-TO251-3 | 50W (Tc) | N-Channel | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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3,994
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 41W (Tc) | P-Channel | 100V | 10.5A (Tc) | 190 mOhm @ 5.25A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
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3,695
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ON Semiconductor | MOSFET P-CH 100V 10.5A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.8W (Ta), 66W (Tc) | P-Channel | 100V | 10.5A (Tc) | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | 1035pF @ 25V | 10V | ±30V | ||
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3,768
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|
Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | 50W (Tc) | N-Channel | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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3,480
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|
ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 66W (Tc) | P-Channel | 100V | 10.5A (Tc) | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | 1035pF @ 25V | 10V | ±30V |
