- Series :
- Part Status :
- Packaging :
- Mounting Type :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,648
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Infineon Technologies | MOSFET N-CH 100V 98A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | - | 100V | 98A (Tc) | 8 mOhm @ 98A, 10V | 2.4V @ 130µA | 90nC @ 10V | 8610pF @ 50V | 4.5V, 10V | ±20V | ||
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3,982
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ON Semiconductor | MOSFET N-CH 60V 90A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 115W (Tc) | N-Channel | - | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 10V | ±20V | ||
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3,632
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IXYS | MOSFET N-CH 75V 98A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 75V | 98A (Tc) | - | 4V @ 100µA | - | - | 10V | ±20V | ||
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1,584
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IXYS | MOSFET N-CH 75V 98A TO-263 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 230W (Tc) | N-Channel | - | 75V | 98A (Tc) | - | 4V @ 100µA | - | - | 10V | ±20V | ||
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1,387
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ON Semiconductor | MOSFET N-CH 60V TO-220-3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | - | N-Channel | - | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | - | - | |||
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2,354
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Infineon Technologies | MOSFET N-CH 200V 98A SUPER-220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | Super-220™-3 (Straight Leads) | SUPER-220™ (TO-273AA) | 650W (Tc) | N-Channel | - | 200V | 98A (Tc) | 23 mOhm @ 59A, 10V | 5V @ 250µA | 240nC @ 10V | 6080pF @ 25V | 10V | ±30V | |||
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3,003
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ON Semiconductor | MOSFET N-CH 60V 98A DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 115W (Tc) | N-Channel | - | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 10V | ±20V | ||
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3,401
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ON Semiconductor | MOSFET N-CH 60V 98A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 115W (Tc) | N-Channel | - | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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3,185
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ON Semiconductor | MOSFET N-CH 60V 98A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 115W (Tc) | N-Channel | - | 60V | 98A (Tc) | 5.7 mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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3,136
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Diodes Incorporated | MOSFET N-CH 100V TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2W (Ta), 139W (Tc) | N-Channel | - | 100V | 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | |||
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3,721
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STMicroelectronics | MOSFET N-CH 68V 98A TO-220AB | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 68V | 98A (Tc) | 9.8 mOhm @ 40A, 10V | 4V @ 250µA | 75nC @ 10V | 2550pF @ 25V | 10V | ±20V |
