Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFD024
Per Unit
$1.80
RFQ
2,565
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 60V 2.5A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 2.5A (Ta) 100 mOhm @ 1.5A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 10V ±20V
IRLD024
GET PRICE
RFQ
3,229
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 60V 2.5A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 2.5A (Ta) 100 mOhm @ 1.5A, 5V 2V @ 250µA 18nC @ 5V 870pF @ 25V 4V, 5V ±10V
IRFD024PBF
Per Unit
$1.35
RFQ
1,880
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 60V 2.5A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 2.5A (Ta) 100 mOhm @ 1.5A, 10V 4V @ 250µA 25nC @ 10V 640pF @ 25V 10V ±20V
IRLD024PBF
Per Unit
$1.15
RFQ
750
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 60V 2.5A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 60V 2.5A (Ta) 100 mOhm @ 1.5A, 5V 2V @ 250µA 18nC @ 5V 870pF @ 25V 4V, 5V ±10V
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