Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLD110
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RFQ
2,696
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Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRFD9120
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RFQ
708
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Vishay Siliconix MOSFET P-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) P-Channel 100V 1A (Ta) 600 mOhm @ 600mA, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRFD110
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RFQ
2,086
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Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IRFD9120PBF
Per Unit
$1.06
RFQ
2,726
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 100V 1A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) P-Channel 100V 1A (Ta) 600 mOhm @ 600mA, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRLD110PBF
Per Unit
$1.00
RFQ
2,483
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRFD110PBF
Per Unit
$0.88
RFQ
2,662
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
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