Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.94
RFQ
2,508
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 80V 110A H2PAK-2 STripFET™ F7 Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 205W (Tc) N-Channel - 80V 110A (Tc) 5 mOhm @ 55A, 10V 4.5V @ 250µA 60nC @ 10V 4500pF @ 25V 10V ±20V
FDP030N06B-F102
Per Unit
$1.98
RFQ
2,963
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 60V 120A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 205W (Tc) N-Channel - 60V 120A (Tc) 3.1 mOhm @ 100A, 10V 4V @ 250µA 99nC @ 10V 8030pF @ 30V 10V ±20V
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