- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,494
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ON Semiconductor | MOSFET N-CH 60V 22A DPAK DPAK | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 | 3.3W (Ta), 43W (Tc) | N-Channel | 60V | 6A (Ta), 22A (Tc) | 39 mOhm @ 11A, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | 4.5V, 10V | ±20V | ||
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3,753
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ON Semiconductor | MOSFET N-CH 30V 54A DPAK | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 | 1.4W (Ta), 50W (Tc) | N-Channel | 30V | 9A (Ta), 54A (Tc) | 10 mOhm @ 30A, 10V | 2.5V @ 250µA | 21nC @ 11.5V | 1350pF @ 12V | 4.5V, 10V | ±20V |
