4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP70P04P409AKSA1
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RFQ
1,901
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Infineon Technologies MOSFET P-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3 75W (Tc) P-Channel - 40V 72A (Tc) 9.4 mOhm @ 70A, 10V 4V @ 120µA 70nC @ 10V 4810pF @ 25V 10V ±20V
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RFQ
1,796
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 Automotive, AEC-Q101, SIPMOS® Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3 300W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 80A, 10V 4V @ 240µA 187nC @ 10V 3660pF @ 25V 10V ±20V
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RFQ
771
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Infineon Technologies MOSFET N-CH 75V 120A TO220 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3 300W (Tc) N-Channel - 75V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V 14400pF @ 37.5V 10V ±20V
IPA075N15N3GXKSA1
Per Unit
$6.53
RFQ
2,577
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Infineon Technologies MOSFET N-CH 150V 43A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3 39W (Tc) N-Channel - 150V 43A (Tc) 7.5 mOhm @ 43A, 10V 4V @ 270µA 93nC @ 10V 7280pF @ 75V 8V, 10V ±20V
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