- Part Status :
- Package / Case :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,901
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Infineon Technologies | MOSFET P-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 75W (Tc) | P-Channel | - | 40V | 72A (Tc) | 9.4 mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | 4810pF @ 25V | 10V | ±20V | |||
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1,796
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
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771
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Infineon Technologies | MOSFET N-CH 75V 120A TO220 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | 10V | ±20V | |||
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2,577
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Infineon Technologies | MOSFET N-CH 150V 43A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3 | 39W (Tc) | N-Channel | - | 150V | 43A (Tc) | 7.5 mOhm @ 43A, 10V | 4V @ 270µA | 93nC @ 10V | 7280pF @ 75V | 8V, 10V | ±20V |