- Series :
- Part Status :
- Technology :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,307
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Microsemi Corporation | MOSFET N-CH 1200V 33A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 960W (Tc) | N-Channel | 1200V | 33A (Tc) | 320 mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | 18200pF @ 25V | 10V | ±30V | |||
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623
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Microsemi Corporation | MOSFET N-CH 700V SOT227 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 273W (Tc) | N-Channel | 700V | 78A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V |
