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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SCT30N120
Per Unit
$27.76
RFQ
1,824
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 1200V 45A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 270W (Tc) N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V
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