- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,240
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 800V 4A I2PAKFP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5.5nC @ 10V | 177pF @ 100V | 10V | ±30V | |||
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2,914
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STMicroelectronics | N-CHANNEL 800 V, 1.50 OHM TYP., | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 800V | 4A (Ta) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | 10V | ±30V | ||||
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1,853
Ships today + free overnight shipping
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STMicroelectronics | N-CHANNEL 800 V, 1.50 OHM TYP., | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | 10V | ±30V |