- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,766
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STMicroelectronics | MOSFET N-CH 60V 120A TO220 | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 300W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | 11400pF @ 25V | 10V | ±20V | ||||
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3,710
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STMicroelectronics | MOSFET N-CH 75V 120A I2PAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 3 mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | 11400pF @ 25V | 10V | ±20V | ||||
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1,128
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STMicroelectronics | MOSFET N-CH 60V 80A I2PAKFP | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 41.7W (Tc) | N-Channel | - | 60V | 80A (Tc) | 3 mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | 11400pF @ 25V | 10V | ±20V |