Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP260N6F6
Per Unit
$3.33
RFQ
2,766
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 60V 120A TO220 DeepGATE™, STripFET™ VI Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 300W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 10V ±20V
STI260N6F6
Per Unit
$6.08
RFQ
3,710
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 75V 120A I2PAK DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 300W (Tc) N-Channel - 75V 120A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 10V ±20V
STFI260N6F6
Per Unit
$4.73
RFQ
1,128
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 60V 80A I2PAKFP DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 41.7W (Tc) N-Channel - 60V 80A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 10V ±20V
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