Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW26NM60
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RFQ
3,352
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 30A TO-247 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 313W (Tc) N-Channel - 600V 30A (Tc) 135 mOhm @ 13A, 10V 5V @ 250µA 102nC @ 10V 2900pF @ 25V 10V ±30V
STF8NK100Z
Per Unit
$4.25
RFQ
1,318
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STMicroelectronics MOSFET N-CH 1000V 6.5A TO220FP SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 40W (Tc) N-Channel - 1000V 6.5A (Tc) 1.85 Ohm @ 3.15A, 10V 4.5V @ 100µA 102nC @ 10V 2180pF @ 25V 10V ±30V
STP8NK100Z
Per Unit
$4.11
RFQ
3,873
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 1000V 6.5A TO-220 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 1000V 6.5A (Tc) 1.85 Ohm @ 3.15A, 10V 4.5V @ 100µA 102nC @ 10V 2180pF @ 25V 10V ±30V
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