- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,304
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STMicroelectronics | MOSFET N-CH 650V 32A I2PAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 250W (Tc) | N-Channel | - | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | |||
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1,327
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STMicroelectronics | MOSFET N-CH 650V 32A TO220 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 250W (Tc) | N-Channel | - | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | |||
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1,114
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STMicroelectronics | MOSFET N-CH 650V 32A TO220FP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | |||
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790
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STMicroelectronics | MOSFET N-CH 650V 32A TO247 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 250W (Tc) | N-Channel | - | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V |
